Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Creative Commons License

Celik O., Tiras E., Ardali S., LİŞESİVDİN S. B., ÖZBAY E.

CENTRAL EUROPEAN JOURNAL OF PHYSICS, cilt.10, sa.2, ss.485-491, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 2
  • Basım Tarihi: 2012
  • Doi Numarası: 10.2478/s11534-011-0100-x
  • Dergi Adı: CENTRAL EUROPEAN JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.485-491
  • Anahtar Kelimeler: Hall effect, LO phonon energy, AlGaN/GaN, Raman spectra, infrared spectra, MODULATION-DOPED HETEROSTRUCTURES, DISLOCATION SCATTERING, INTERFACE-ROUGHNESS, RAMAN-SCATTERING, MOBILITY, GAN, GAN/ALGAN, HETEROJUNCTION, TRANSPORT, FIELD
  • Gazi Üniversitesi Adresli: Evet

Özet

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.