Effect of nitrogen plasma on the transport properties of SI GaAs photocathode

Koc E., Kurt H. H., Salamov B. G.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.5, sa.9, ss.988-993, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 5 Sayı: 9
  • Basım Tarihi: 2011
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.988-993
  • Gazi Üniversitesi Adresli: Evet

Özet

In this paper we experimentally discuss the nitrogen and air plasma effect on the transport properties of semi-insulating (SI) GaAs photocathode in the semiconductor gas discharge structure. Discharge gap is filled with various pressures of air and nitrogen at different gap spacing d and cathode diameter D. Under the same discharge conditions, while the N-type CVC behaviors and low frequency oscillations in air are observed at the lower pressures, that behavior in nitrogen gas is generally encountered between p = 100 and 480 Torr. Besides, threshold electrical field E(th) value at d = 525 mu m is found to 9.4 kV/cm in the N(2)-filled case. This value is higher than that in the air-filled case observed at d = 525 mu m. Our results also provide important knowledge associated with plasma-surface interaction with low-energy nitrogen ions on the presence of an oxide or disturbed layer is encountered at the interface between the photocathode and the gas discharge plasma.