Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers

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Yildiz A., LİŞESİVDİN S. B., Tasli P., Ozbay E., Kasap M.

CURRENT APPLIED PHYSICS, cilt.10, sa.3, ss.838-841, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 3
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.cap.2009.10.004
  • Dergi Adı: CURRENT APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.838-841
  • Gazi Üniversitesi Adresli: Evet

Özet

The low-temperature conductivity of InxGa1-xN alloys (0.06 <= x <= 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1-xN alloys. In addition, all of the InxGa1-xN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as x(c) = 0.0543 for InxGa1-xN alloys. (c) 2009 Elsevier B.V. All rights reserved.