Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer

Yu H., LİŞESİVDİN S. B., Bölükbaş B., Kelekçi Ö., Öztürk M., Çakmak H.

2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II, Boston, United States Of America, 29 November - 03 December 2009, pp.4

  • Publication Type: Conference Paper / Summary Text
  • City: Boston
  • Country: United States Of America
  • Page Numbers: pp.4
  • Gazi University Affiliated: Yes