Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

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Kelekci O., LİŞESİVDİN S. B., Ozcelik S., Ozbay E.

Physica B: Condensed Matter, vol.406, no.8, pp.1513-1518, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 406 Issue: 8
  • Publication Date: 2011
  • Doi Number: 10.1016/j.physb.2011.01.059
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1513-1518
  • Keywords: AlGaN/AlN/GaN, HEMT, Schrodinger, Poisson, 2DEG, InGaN, Back barrier, ALGAN/GAN/INGAN/GAN DH-HEMTS, BAND PARAMETERS, GAN, INTERLAYER, FIELD
  • Gazi University Affiliated: Yes


The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed. © 2011 Elsevier B.V. All rights reserved.