Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS:PVP)/n-Si structures


Ulusoy M., Altındal Ş., Durmus P., Ozcelik S., Azızıan-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, vol.32, no.10, pp.13693-13707, 2021 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 32 Issue: 10
  • Publication Date: 2021
  • Doi Number: 10.1007/s10854-021-05947-x
  • Journal Name: Journal of Materials Science: Materials in Electronics
  • Journal Indexes: Science Citation Index Expanded, Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.13693-13707

Abstract

© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features, for example, diffusion-potential (VD), doping density of donor-atoms (ND), Fermi-energy (EF), barrier-height (ΦB), and depletion layer-width (WD) were extracted reverse-bias C−2-V plots as function frequency and voltage. The voltage profile of interface/surface-states (Nss)/ relaxation-times (τ), and series resistance (Rs) were also obtained from the admittance and Nicollian-Brews method, respectively. Strongly frequency-dependent and voltage, especially in both accumulation and depletion regions due to the existence of Nss, Rs, and polarization as well as (NiS-doped PVP) organic interlayer. At low frequency, the observed higher value of C and G shows that thin (NiS:PVP) interlayer can be successfully used to obtain high charges/energy storage (MPS) structure/capacitor instead of conventional insulator layer performed traditional methods. As a result, the observed important changes in electrical parameters with frequency and voltage depend on Nss, their τ, Rs, organic interlayer and interfacial or dipole polarization.