Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range


Bengi S., Yükseltürk E., BÜLBÜL M. M.

Journal of Materials Science: Materials in Electronics, vol.34, no.3, 2023 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 34 Issue: 3
  • Publication Date: 2023
  • Doi Number: 10.1007/s10854-022-09613-8
  • Journal Name: Journal of Materials Science: Materials in Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Gazi University Affiliated: Yes

Abstract

© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.We studied the I–V characteristics of Al/HfO2/p-Si structure investigated in a wide temperature range of 80–400 K. The zero-bias barrier height (ΦB) and ideality factor (n) values were calculated for the structure using thermionic emission theory, and it was observed that the values ranged between 3.88 and 0.28 eV at 80 K and 2.81 and 0.90 eV at 400 K, respectively. T0 effect value was calculated from straight line fitted to nT–T plot. The fit to the experimental value of nT–T plot was parallel to the ideal Schottky contact line. T0 effect value of structure was found as 145.34 K. The series resistance values decreasing with increasing temperature were calculated 888.76 Ω at 80 K at 5 V and 122.10 Ω at 400 K at 5 V. In addition, the energy distribution of interface state density profiles was obtained by considering the effective barrier height depending on the temperature (Φe) and the voltage dependence of the ideality factor [n (V)].