Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)

Akpinar O., Bilgili A. K., Ozturk M., Ozcelik S.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.126, no.8, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 8
  • Publication Date: 2020
  • Doi Number: 10.1007/s00339-020-03810-0
  • Journal Name: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
  • Keywords: Al, AlGaN, GaN, Hall measurements, Phonon scattering, HEMT, MOMENTUM RELAXATION, ENERGY, BULK
  • Gazi University Affiliated: Yes

Abstract

In this study, a Al (0.3) Ga (0.7) N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (rho), Hall mobility (mu) and carrier density (n) are measured in 0.01-0.14 T magnetic field range and 25-340 K temperature range. Also, scattering mechanisms effecting electron mobility are discussed. Resistivity analyses are presented by depending on resistivity measurements.