The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., ...More

10th All-Russian Conference Gallium, aluminum and indium nitrides, 23 - 25 March 2015

  • Publication Type: Conference Paper / Summary Text
  • Gazi University Affiliated: Yes