Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Korucu D., Turut A., TURAN R., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.16, sa.2, ss.344-351, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 2
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.mssp.2012.09.015
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.344-351
  • Anahtar Kelimeler: Ag/p-InP SBD, Impedance spectroscopy, Series resistance, Interface states, Intersection in C, G, DEPENDENT ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, INTERFACE STATES, ANISOTYPE HETEROJUNCTION, VOLTAGE CHARACTERISTICS, NEGATIVE CAPACITANCE, ANOMALOUS PEAK, I-V, FREQUENCY, INJECTION
  • Gazi Üniversitesi Adresli: Evet

Özet

Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R,) and interface state(s) (N-ss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C-c and conductance G(c) values in order to see the effects of R-s. Both the C-V and R-s-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N-ss. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages. (C) 2012 Elsevier Ltd. All rights reserved.