Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,


YÜKSELTÜRK E., BENGİ S., BÜLBÜL M. M.

2nd International Conference on Innovations in NaturalScience and Engineering, KYİV, Ukraine, 7 - 10 September 2018

  • Publication Type: Conference Paper / Summary Text
  • City: KYİV
  • Country: Ukraine
  • Gazi University Affiliated: Yes