Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,

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YÜKSELTÜRK E., BENGİ S., BÜLBÜL M. M.

2nd International Conference on Innovations in NaturalScience and Engineering, KYİV, Ukraine, 7 - 10 September 2018, (Summary Text)

• Publication Type: Conference Paper / Summary Text
• City: KYİV
• Country: Ukraine
• Gazi University Affiliated: Yes