Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

Atmaca G., Elibol K., LİŞESİVDİN S. B., Kasap M., Ozbay E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.11, no.5, pp.578-582, 2009 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 5
  • Publication Date: 2009
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.578-582
  • Gazi University Affiliated: Yes


We explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron mobility transistors. Investigations were carried out by solving non-linear Schrodinger-Poisson equations, self-consistently including polarization induced carriers that are important for GaN-based heterostructures and two-dimensional electron gas (2DEG) formation. Strain relaxation limits were also calculated, in which optimized cases were found for the investigated Al-mole fraction and thickness values under pseudomorphic limits. The effect of the investigated thickness changes on electron probability densities show no important change in the overall simulations. In addition to a carrier increase in the selected optimum cases, reasonable mobility behavior is also expected.