The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures

Atmaca G., Narin P., Kutlu E., LİŞESİVDİN S. B.

IX. Uluslararası Balkan Fizik Birliği Konferansı, 24 - 27 August 2015

• Publication Type: Conference Paper
• Gazi University Affiliated: Yes