Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

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Corekci S., Dugan S., Ozturk M. K., Cetin S. Ş., ÇAKMAK M., Ozcelik S., ...Daha Fazla

JOURNAL OF ELECTRONIC MATERIALS, cilt.45, sa.7, ss.3278-3284, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 7
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1007/s11664-016-4536-z
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3278-3284
  • Anahtar Kelimeler: AlInN/AlN/GaN HEMT, AlInN barrier, AlN buffer, ELECTRON-MOBILITY TRANSISTORS, TRANSPORT-PROPERTIES, GAN, LAYERS, DISLOCATIONS, LUMINESCENCE
  • Gazi Üniversitesi Adresli: Evet

Özet

Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (102) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (102) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 x 10(8) cm(-2). The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.