Akademik Veri Yönetim Sistemi
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, cilt.11, sa.2, 2022 (SCI-Expanded)
Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage (C-V) and conductance-voltage (G-V) properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been computed by taking into account the series resistance (R-s) and interface states (D-it) effects. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance (C-in), R-s and D-it. The values of R-s and D-it were determined as 810 Omega and 1.52 x (-1)0(12) eV(-1) cm(-2) for 30 kHz and 38 Omega and 3.38 x (1)0(11) eV(-1) cm(-2) for 1 MHz. Experimental results corroborated that the R-s and D-it are influential parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance (C-m) and conductance (G(m)) were corrected in order to obtain the real diode capacitance (C-c) and conductance (G(c)). Schottky diode parameters such as barrier height (Phi(B)), ionized donor density (N-D), Fermi level (E-F), built-in voltage (V-D) were extracted from the frequency-dependent C-c-V and 1/C-c(2)-V relations. The values of Phi(B) was determined as 0.796 eV for 30 kHz and 1.090 eV for 1 MHz. The R-s and D-it values were observed to decrease, while the Phi(B) values increase as the frequency increases. Results reveal that the fabricated diode can potentially be used as a promising candidate material for electronics applications. (C) 2022 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.