The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics

Kınacı B., Asar T., Özen Y., Ozcelik S.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.5, sa.4, ss.434-437, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 5 Sayı: 4
  • Basım Tarihi: 2011
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.434-437
  • Anahtar Kelimeler: Schottky barrier diode, TiO2, Temperature dependence, DC magnetron sputtering, CURRENT-VOLTAGE CHARACTERISTICS, TIO2 THIN-FILMS, SERIES RESISTANCE, INTERSECTING BEHAVIOR, GAAS, FABRICATION, EXTRACTION, LAYER, SBDS, PLOT
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, the current-voltage (I-V) characteristics of Au/TiO2/n-Si Schottky barrier diodes (SBDs) were examined at high temperatures. TiO2 thin films were deposited on polycrystalline n-type Silicon (Si) substrate using DC magnetron sputtering system. In order to improve the crystal quality, thermal anneling process were done at 700 °C. The electrical parameters such as barrier height (Φb), ideality factor (n) and series resistance (Rs) of Au/TiO2/n-Si SBDs have been investigated by using forward and reverse bias I-V measurements in the temperature range of 340-400 K by steps of 20 K. Also, the values of Rs and Φb were determined by using Cheung's and Norde methods. It was seen that there was a good agreement between the values of Rs and Φb obtained from the forward bias In(I-V) curves by applying Cheung's and Norde methods.