In this study, the current-voltage (I-V) characteristics of Au/TiO2/n-Si Schottky barrier diodes (SBDs) were examined at high temperatures. TiO2 thin films were deposited on polycrystalline n-type Silicon (Si) substrate using DC magnetron sputtering system. In order to improve the crystal quality, thermal anneling process were done at 700 °C. The electrical parameters such as barrier height (Φb), ideality factor (n) and series resistance (Rs) of Au/TiO2/n-Si SBDs have been investigated by using forward and reverse bias I-V measurements in the temperature range of 340-400 K by steps of 20 K. Also, the values of Rs and Φb were determined by using Cheung's and Norde methods. It was seen that there was a good agreement between the values of Rs and Φb obtained from the forward bias In(I-V) curves by applying Cheung's and Norde methods.