Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers


Creative Commons License

Kelekci O., LİŞESİVDİN S. B. , Ozcelik S. , Ozbay E.

Physica B: Condensed Matter, vol.406, no.8, pp.1513-1518, 2011 (Journal Indexed in SCI Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 406 Issue: 8
  • Publication Date: 2011
  • Doi Number: 10.1016/j.physb.2011.01.059
  • Title of Journal : Physica B: Condensed Matter
  • Page Numbers: pp.1513-1518

Abstract

The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed. © 2011 Elsevier B.V. All rights reserved.