Detailed Consideration of Electrical and Dielectric Properties of Au/Ni/n-Si MS Structure in a Wide Frequency Range


Özen Y.

SILICON, 2020 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume:
  • Publication Date: 2020
  • Doi Number: 10.1007/s12633-020-00656-2
  • Title of Journal : SILICON

Abstract

In the presented study, the electrical and dielectric properties of Au/Ni/n-Si MS structure are examined in detail by performing frequency-dependent admittance spectroscopy technique over a wide frequency range (3 kHz-1 MHz). Dielectric constant, dielectric loss, dielectric loss tangent, real modulus, imaginary modulus, and electrical conductivity of the structures are calculated by evaluating the results obtained from admittance spectroscopy. The experimental data received in the wide frequency range is examined in three different frequency ranges as low (3-10 kHz), medium (20-100 kHz) and high (0.2-1 MHz) to a more detailed examination and a better understanding of electrical and dielectric properties. The dielectric loss tangent, real modulus and imaginary modulus values increase with increasing frequency, while dielectric constant and dielectric loss values decrease with increasing frequency. The electric modulus values increase with the increasing frequency is ascribed by the dipoles and the polarize electrons' dielectric relaxation. In addition, despite the change of electrical conductivity values are constant in the low frequency and middle frequency regions, it decreases as the frequency increases in the high-frequency region. For all parameters, the frequency-dependent behavior of the structure is specifically studied at 2 V. It is concluded within the present study that Si-based MS structures created by integrating Au/Ni have the potential to be used especially in innovative and applicable electronic and optoelectronic devices such as rectifiers and switchers.