Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS:PVP)/n-Si structures

Ulusoy M., Altındal Ş., Durmus P., Ozcelik S., Azızıan-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, cilt.32, sa.10, ss.13693-13707, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 10
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s10854-021-05947-x
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.13693-13707
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features, for example, diffusion-potential (VD), doping density of donor-atoms (ND), Fermi-energy (EF), barrier-height (ΦB), and depletion layer-width (WD) were extracted reverse-bias C−2-V plots as function frequency and voltage. The voltage profile of interface/surface-states (Nss)/ relaxation-times (τ), and series resistance (Rs) were also obtained from the admittance and Nicollian-Brews method, respectively. Strongly frequency-dependent and voltage, especially in both accumulation and depletion regions due to the existence of Nss, Rs, and polarization as well as (NiS-doped PVP) organic interlayer. At low frequency, the observed higher value of C and G shows that thin (NiS:PVP) interlayer can be successfully used to obtain high charges/energy storage (MPS) structure/capacitor instead of conventional insulator layer performed traditional methods. As a result, the observed important changes in electrical parameters with frequency and voltage depend on Nss, their τ, Rs, organic interlayer and interfacial or dipole polarization.