The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures


Al Abbas J., Narin P., Atmaca G., Kutlu E., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.11, ss.328-331, 2017 (SCI Expanded İndekslerine Giren Dergi) identifier

  • Cilt numarası: 11
  • Basım Tarihi: 2017
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Sayfa Sayıları: ss.328-331

Özet

© 2017 National Institute of Optoelectronics. All rights reserved.In this study, we have numerically investigated the two-dimensional electron gas (2DEG) carrier densities and electron probability densities of pseudomorphically grown ultrathin-barrier AlN/GaN hetero structures using self-consistent solutions of one-dimensional, non-linear Schrödinger–Poisson equations. In these calculations, we have focused on three different AlN/GaN hetero structures included fully undoped, the only Si-doped cap layer and the only Si-doped barrier layer. As a result of the calculations, it was found that doping of AlN barrier layer more effective than other cases on the 2DEG carrier density and the doping of GaN cap layer has not a significant effect on the 2DEG probability densities.