Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes


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Arslan E., Butun S., ŞAFAK ASAR Y. , Cakmak H., Yu H., ÖZBAY E.

MICROELECTRONICS RELIABILITY, vol.51, no.3, pp.576-580, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 51 Issue: 3
  • Publication Date: 2011
  • Doi Number: 10.1016/j.microrel.2010.09.017
  • Title of Journal : MICROELECTRONICS RELIABILITY
  • Page Numbers: pp.576-580

Abstract

The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current transport mechanisms for (Ni/Au)-AIN/GaN SBDs, by taking the J(s(tunnel)), E(0), and R(s) as adjustable fit parameters, the experimental J-V data were fitted to the analytical expressions given for the current transport mechanisms in a wide range of applied biases and at different temperatures. Fitting results show the weak temperature dependent behavior in the saturation current and the temperature independent behavior of the tunneling parameters in this temperature range. Therefore, it has been concluded that the mechanism of charge transport in (Ni/Au)-AIN/GaN SBDs, along the dislocations intersecting the space charge region, is performed by tunneling.