Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

Tasli P., Sarikavak B., Atmaca G., Elibol K., Kuloglu A. F., Lisesivdin S. B.

PHYSICA B-CONDENSED MATTER, cilt.405, sa.18, ss.4020-4026, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 405 Sayı: 18
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.physb.2010.06.049
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4020-4026
  • Anahtar Kelimeler: InAlN, AlInN, Ultrathin barrier, HEMT, Schrodinger, Poisson, 2DEG, ELECTRON-MOBILITY TRANSISTORS, ALGAN/GAN HEMTS, PIEZOELECTRIC POLARIZATION, BAND PARAMETERS, HETEROSTRUCTURES, SEMICONDUCTORS, INALN/(IN)GAN, OPERATION, HFETS, WELL
  • Gazi Üniversitesi Adresli: Evet

Özet

The effects of thicknesses, alloy fraction and doping density of different layers in a novel pseudomorphic n-GaN/InxAl1-xN/AlN/GaN ultrathin barrier heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrodinger-Poisson equations. The calculations include polarization-induced carriers and thermally activated bulk carriers. Important increments in carrier density are found with increasing thickness and decreasing indium-mole fraction of In,All NI ultrathin barrier layer. From an experimental point of view, two different device structures are suggested for the low-bias and high-bias applications. (C) 2010 Elsevier B.V. All rights reserved.