Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

Tasli P., Sarikavak B. , Atmaca G., Elibol K., Kuloglu A. F. , Lisesivdin S. B.

PHYSICA B-CONDENSED MATTER, vol.405, no.18, pp.4020-4026, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 405 Issue: 18
  • Publication Date: 2010
  • Doi Number: 10.1016/j.physb.2010.06.049
  • Page Numbers: pp.4020-4026


The effects of thicknesses, alloy fraction and doping density of different layers in a novel pseudomorphic n-GaN/InxAl1-xN/AlN/GaN ultrathin barrier heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrodinger-Poisson equations. The calculations include polarization-induced carriers and thermally activated bulk carriers. Important increments in carrier density are found with increasing thickness and decreasing indium-mole fraction of In,All NI ultrathin barrier layer. From an experimental point of view, two different device structures are suggested for the low-bias and high-bias applications. (C) 2010 Elsevier B.V. All rights reserved.