Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN

Zeybek O., Ayaz A., Ozturk M. K. , Davarpanah A. M. , Barrett S. D. , Bayirli M., ...Daha Fazla

Journal of Materials Science: Materials in Electronics, cilt.29, sa.3, ss.2040-2044, 2018 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 29 Konu: 3
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s10854-017-8116-7
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Sayfa Sayıları: ss.2040-2044


© 2017, Springer Science+Business Media, LLC.In this study, numerical analysis of temperature variation for surface structure in AlxGa1−xN thin film grown by metal organic chemical vapour deposition has been performed. Numerical studies were carried out over morphologic views which were obtained by atomic force microscope. Numerical studies namely, effect of; annealing temperature to fractal size, occupied fraction. Also the interactions of those parameters each other were examined too. Fractal dimension value adheres to temperature with 3rd degree function. At increasing temperatures, the surface morphology changed from step-flow to grain-like surface structure. The structure which is regular and repetitive each other was impaired the AlxGa1−xN surface image at temperatures over 900 °C and was well simulated for fractal size.