Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures

Goekcen M., Altuntas H., Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.12, ss.838-841, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 2 Sayı: 12
  • Basım Tarihi: 2008
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.838-841
  • Gazi Üniversitesi Adresli: Evet

Özet

Temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of the Au/SiO2/n( MOS) structures were investigated by considering the both the interface states (N-ss) and series resistance (R-s) Both the values of capacitance and conductance generally increase with increasing temperature. These increase in G/w especially at high temperatures results from the existence of interface states at SiO2/n-GaAs interface. It is found the existence of R-s, the forward bias C-V curves exhibit an anamolous peak, and this peak positions shift toward region to inversion region with increasing temperature. Also the magnitude of peak increases with temperature. The values of R-s and Nss were calculated by using Nicollian and Goetzberger and Hill-Coleman respectively. The experimental C-V and G/w-V characteristics confirm that the R-s and N-ss of the MOS structure parameters that strongly influence the electrical characteristics of the Au/SiO2/n-GaAs structures especially at high temperatures.