A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures


Abbas J. M. A., Atmaca G., NARİN P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

JOURNAL OF ELECTRONIC MATERIALS, vol.46, no.8, pp.5278-5286, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 46 Issue: 8
  • Publication Date: 2017
  • Doi Number: 10.1007/s11664-017-5540-7
  • Journal Name: JOURNAL OF ELECTRONIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5278-5286
  • Keywords: Ultrathin-barrier heterostructures, 2DEG, GaN, AlN, back-barrier, 2-DIMENSIONAL ELECTRON-GAS, HEMT STRUCTURES, MOBILITY, TRANSPORT, POLARIZATION, TRANSISTORS, CONSTANTS, ALN
  • Gazi University Affiliated: Yes

Abstract

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrodinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.