A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

Abbas J. M. A., Atmaca G., NARİN P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

JOURNAL OF ELECTRONIC MATERIALS, cilt.46, sa.8, ss.5278-5286, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 46 Sayı: 8
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1007/s11664-017-5540-7
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5278-5286
  • Anahtar Kelimeler: Ultrathin-barrier heterostructures, 2DEG, GaN, AlN, back-barrier, 2-DIMENSIONAL ELECTRON-GAS, HEMT STRUCTURES, MOBILITY, TRANSPORT, POLARIZATION, TRANSISTORS, CONSTANTS, ALN
  • Gazi Üniversitesi Adresli: Evet

Özet

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrodinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.