The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes


Ozdemir S., DÖKME İ. , ALTINDAL Ş.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.98, sa.6, ss.699-712, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 98 Konu: 6
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1080/00207217.2011.560555
  • Dergi Adı: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Sayfa Sayıları: ss.699-712

Özet

Metal-insulator-semiconductor Schottky diodes were fabricated to investigate the tunnel effect and the dominant carrier transport mechanism by using current density-voltage (J-V) and capacitance-voltage (C-V) measurements in the temperature range of 295-370 K. The slope of the ln J-V curves was almost constant value over the nearly four decades of current and the forward bias current density J is found to be proportional to Jo (T) exp(AV). The values of Nss estimated from J-V and C-V measurements decreased with increasing temperature. The temperature dependence of the barrier heights obtained from forward bias J-V was found to be entirely different than that from the reverse bias C-V characteristics. All these behaviours confirmed that the prepared samples have a tunnel effect and the current transport mechanism in the temperature range of 295-370 K was predominated by a trap-assisted multi-step tunnelling, although the Si wafer has low doping concentration and the measurements were made at moderate temperature.