Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes

Bengi S., BÜLBÜL M. M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.16, ss.451-456, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16
  • Basım Tarihi: 2014
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.451-456
  • Gazi Üniversitesi Adresli: Evet

Özet

The effect of post-annealing on the current-voltage (l-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of metal-insulator-semiconductor Al/HfO2/p-Si (100) diode grown by Magnetron sputtering ha been investigated at room temperature. The results indicate that the post-annealed sample for 2 h at 700 degrees C has a lower leakage current and interface states compared with the as-deposited sample. From the I-V, C-V and G/omega-V measurements, we also calculated the main diode parameters, including ideality factor n, barrier height Phi(B), interface states N-ss, and series resistance R-s. It was found that the annealing process has strongly influenced the electrical properties of this sample.