The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial layer is important for understanding the electrical and dielectric properties of SDs. Therefore, in this study polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si SDs were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The effects of interface state density (N(ss)) and series resistance (R(s)) on C-V characteristics were investigated in the wide temperature range. It was found that both of the C-V-T and G/w-V-T curves included two abnormal regions and one intersection point. The dielectric constant (epsilon ''), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance were studied for Au/PVA (Ni, Zn-doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta are a strong function of the temperature. Also, the results indicate the interfacial polarization can be more easily occurred at high temperatures. (C) 2009 Elsevier Ltd. All rights reserved.