High frequency characteristics of tin oxide thin films on Si

Yueksel O. F., Ocak S., Selcuk A. B.

VACUUM, cilt.82, sa.11, ss.1183-1186, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 82 Sayı: 11
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.vacuum.2008.02.002
  • Dergi Adı: VACUUM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1183-1186
  • Anahtar Kelimeler: MOS diodes, SnO2, series resistance, interface state density, INTERFACE-STATE DENSITY, SPRAY DEPOSITION METHOD, SEMICONDUCTOR STRUCTURES, CONDUCTANCE TECHNIQUE, ELECTRICAL-PROPERTIES, MOS STRUCTURES, SNO2 FILMS, CAPACITANCE, SILICON, INP
  • Gazi Üniversitesi Adresli: Hayır

Özet

High frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D-it, ranges from 2.44 x 10(13) cm(-2) eV(-1) at 300 kHz to 0.57 x 10(13) cm(-2) eV(-1) at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/omega-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metaloxide-semiconductor structure. (C) 2008 Elsevier Ltd. All rights reserved.