High frequency characteristics of tin oxide thin films on Si


Yueksel O. F. , Ocak S., Selcuk A. B.

VACUUM, vol.82, no.11, pp.1183-1186, 2008 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 82 Issue: 11
  • Publication Date: 2008
  • Doi Number: 10.1016/j.vacuum.2008.02.002
  • Journal Name: VACUUM
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.1183-1186
  • Keywords: MOS diodes, SnO2, series resistance, interface state density, INTERFACE-STATE DENSITY, SPRAY DEPOSITION METHOD, SEMICONDUCTOR STRUCTURES, CONDUCTANCE TECHNIQUE, ELECTRICAL-PROPERTIES, MOS STRUCTURES, SNO2 FILMS, CAPACITANCE, SILICON, INP

Abstract

High frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D-it, ranges from 2.44 x 10(13) cm(-2) eV(-1) at 300 kHz to 0.57 x 10(13) cm(-2) eV(-1) at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/omega-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metaloxide-semiconductor structure. (C) 2008 Elsevier Ltd. All rights reserved.