Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.35, sa.5, 2024 (SCI-Expanded)
In this study, frequency-dependent physical parameters, voltage-dependent of surface traps/states, and their lifetime of the Au/(ZnCdS-GO:PVP)/n-Si (MPS) type structures were investigated by using conductance measurements (Y = 1/Z = G + j omega C) both in wide range frequency (3 kHz-3 MHz) and voltage (from - 4.00 V to 1.50 V). Firstly, basic physical parameters such as density of doping donor atoms (N-D), diffusion potential (V-D), Fermi-energy (EF), barrier height phi B(C-V), depletion-layer thickness (W-D), and maximum electric field (E-m) were calculated from these measurements for each frequency. These values were found as 1.69 x 10(16) cm(-3), 0.444 eV, 0.193 eV, 0.606 eV, 1.31 x 10(-5) cm, 7.66 x 104 V/cm for 10 kHz, and 1.42 x 1016 cm(-3), 0.461 eV, 0.198 eV, 0.628 eV, 1.46 x 10(-5) cm, 7.80 x 104 V/cm for 3 MHz, respectively. While ND decreases with increasing frequency, the other parameters increase. The density of surface states (N-ss) and their lifetimes (tau) were also obtained from conductance techniques. While the Nss were changed between 2.78 x 10(12) at 0.40 V and 2.61 x 1012 eV(-1)cm(-2) at 1.3 V, and the Nss-V curve shows two distinctive peaks which correspond to 0.5 V (2.87 x 1012 eV(-1)cm(-2)) and 1.2 V (2.68 x 1012 eV(-1)cm(-2)), respectively. The values of tau were changed between 105 mu s (at 0.4 V) and 15.3 mu s (at 1.3 V) and decreased with increasing voltage as exponentially. These lower values of N-ss were attributed to the used (ZnCdS-GO:PVP) interlayer.