Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier


Creative Commons License

LİŞESİVDİN S. B. , Tasli P., Kasap M., Ozturk M., Arslan E., Ozcelik S., ...More

THIN SOLID FILMS, vol.518, no.19, pp.5572-5575, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 518 Issue: 19
  • Publication Date: 2010
  • Doi Number: 10.1016/j.tsf.2010.04.120
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5572-5575
  • Gazi University Affiliated: Yes

Abstract

We present a carrier transport study on low indium content (0.064 <= x <= 0.140) InxAl1-xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrodinger-Poisson equations. (C) 2010 Elsevier B.V. All rights reserved.