APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.126, no.8, 2020 (SCI-Expanded)
Article / Article
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
Al, AlGaN, GaN, Hall measurements, Phonon scattering, HEMT, MOMENTUM RELAXATION, ENERGY, BULK
Gazi University Affiliated:
In this study, a Al (0.3) Ga (0.7) N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (rho), Hall mobility (mu) and carrier density (n) are measured in 0.01-0.14 T magnetic field range and 25-340 K temperature range. Also, scattering mechanisms effecting electron mobility are discussed. Resistivity analyses are presented by depending on resistivity measurements.