Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)


Akpinar O., Bilgili A. K. , Ozturk M. , Ozcelik S.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.126, no.8, 2020 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 8
  • Publication Date: 2020
  • Doi Number: 10.1007/s00339-020-03810-0
  • Title of Journal : APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Abstract

In this study, a Al (0.3) Ga (0.7) N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (rho), Hall mobility (mu) and carrier density (n) are measured in 0.01-0.14 T magnetic field range and 25-340 K temperature range. Also, scattering mechanisms effecting electron mobility are discussed. Resistivity analyses are presented by depending on resistivity measurements.