Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping


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Bilgili A. K. , Akpinar O., Kurtulus G., Ozturk M. K. , ÖZÇELİK S. , ÖZBAY E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, sa.14, ss.12373-12380, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 29 Konu: 14
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s10854-018-9351-2
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Sayfa Sayıları: ss.12373-12380

Özet

By using metal organic chemical vapor deposition technique, InGaN/GaN solar cell (SC) structure is deposited over sapphire (Al2O3) wafer as GaN buffer and GaN epitaxial layers. Structural properties of InGaN/GaN/Al2O3 SC structure is investigated by using high resolution X-ray diffraction technique dependent on In content. By using reciprocal space mapping, reciprocal space data are converted to w-theta data with a software. These w-theta data and full width at half maximum data are used for calculating lattice parameters. When compared with w-theta measurements in literature it is seen that especially a- lattice parameter is found very near to universal value from RSM. It is calculated as 3.2650 nm for sample A (S.A) GaN layer and 3.2570 nm for sample B (S.B) GaN layer on (105) asymmetric plane. Strain and stress calculations are made by using these lattice parameters. Strain and stress are calculated as 0.02363 and 8.6051 GPa for S.A GaN layer respectively. Other results are given in tables in the results and discussion section of this article. Edge, screw and mixed type dislocations are calculated as mosaic defects. All these calculations are made for two samples on (002) symmetric and (105) asymmetric planes. As a result it is seen that measurements by using RSM give more sensitive results. a- lattice parameter calculated with this technique is the best indicator of this result.