Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction


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Ozturk M. K. , Hongbo Y., Sarikavak B. , Korcak S., Ozcelik S. , Ozbay E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.21, sa.2, ss.185-191, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 21 Konu: 2
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1007/s10854-009-9891-6
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Sayfa Sayıları: ss.185-191

Özet

The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are determined by using nondestructive high-resolution X-ray diffraction in detail. The distorted GaN layers were described as mosaic crystals characterized by vertical and lateral coherence lengths, a mean tilt, twist, screw and edge type threading dislocation densities. The rocking curves of symmetric (00.l) reflections were used to determine the tilt angle, while the twist angle was an extrapolated grown omega-scan for an asymmetric (hk.l) Bragg reflection with an h or k nonzero. Moreover, it is an important result that the mosaic structure was analyzed from a different (10.l) crystal direction that was the angular inclined plane to the z-axis. The mosaic structure parameters were obtained in an approximately defined ratio depending on the inclination or polar angle of the sample.