Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures


JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.15, pp.14224-14232, 2019 (SCI-Expanded) identifier identifier


The measured capacitance and conductance-voltage (C & G/omega-V) data between 1 and 200 kHz of Al/(BSA-doped-PANI)/p-InP structure were examined to uncover real and imaginary components of complex permittivity (epsilon* = epsilon ' - j epsilon ''), loss tangent (tan delta), complex electric modulus (M* = M ' + jM ''), and electrical conductivity (sigma). It was uncovered that dielectric constant (epsilon '), dielectric loss (epsilon ''), tan delta, real and imaginary components (M ' and M '') show a big dispersive behavior at low frequencies due to the oriental and the interfacial polarizations, as well as the surface states (N-ss) and the BSA doped-PANI interlayer. Such behavior in epsilon ', epsilon '', and tan delta, behavior with frequency was also explained by Maxwell-Wagner relaxation. The values of sigma are almost constant at lower-intermediate frequencies, but they start increase at high frequencies which are corresponding to the dc and ac conductivity, respectively. The values of M ' and M '' are lower in the low frequency zone and they become increase with increasing frequency at accumulation region due to the short-range charge carriers mobility. Ultimately, dielectric parameters and electric modulus alteration with frequency is the consequence of surface states and relaxation phenomena.