Ionizing radiation effects on Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure


Ertugrul-Uyar R., Buyukbas-Ulusan A., Tataroglu A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.22, pp.19846-19851, 2020 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 22
  • Publication Date: 2020
  • Doi Number: 10.1007/s10854-020-04508-y
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.19846-19851

Abstract

This paper presents the ionizing radiation effects on current-voltage (I-V) characteristics of Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure. The TiO(2)film as the dielectric interface layer of Au/n-Si was deposited using RF magnetron sputtering method. The MIS structure was exposed to gamma irradiation from Co-60 source with the dose rate of 0.69 kGy/h, and it was irradiated in the range of 0-100 kGy. The electronic parameters such as barrier height (phi(b0)), ideality factor (n), series resistance (R-s), and interface state density (N-ss) of the MIS structure were calculated from the measured I-V data. Experimental results showed that all calculated parameters change with the irradiation dose rate. To determine current conduction mechanisms of the MIS structure, the In (I-F) vs In (V) and In (I-R) vsV(1/2)curves for all irradiation doses are plotted under both forward bias and reverse bias, respectively.