Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C

Yalçın Y., Arslan Ö., İldeş C., Çokduygulular E., Çetinkaya Ç., Kınacı B.

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS, cilt.34, sa.25, ss.1786, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 34 Sayı: 25
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s10854-023-11222-y
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.1786
  • Gazi Üniversitesi Adresli: Evet

Özet

Alumina (Al2O3) film with thicknesses of 100 nm were deposited on n-Si substrate at room temperature by radio frequency (RF) magnetron sputtering, and Al2O3/n-Si structure was rapidly thermally annealed at 400 & DEG;C under vacuum conditions. Within the scope of this study, elemental analysis and post-metallization electrical/dielectric analyzes of this structure were carried out as a function of vacuum annealing. Quantitative elemental microanalysis of the Al2O3/n-Si structure annealed at temperature of 400 & DEG;C was performed by scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS) method. Through SEM-EDS analysis, the structure exhibited a pattern with an Al/O atomic ratio of approximately 2/3. The electrical properties of the Au/n-Si structure with Al2O3 interface layer annealed at temperature of 400 & DEG;C depending on the frequency (between 30 kHz and 1 MHz) and the voltage (& PLUSMN; 4 V) using C-V and G/?-V characteristics were obtained. In addition, the dielectric parameters such as dielectric constant, dielectric loss, loss tangent, and the electrical ac conductivity obtained by using the C and G/? data and the dielectric properties of Au/Al2O3/n-Si structure were analysis depending on the frequency and voltage, as in the electrical analysis.