Akademik Veri Yönetim Sistemi
Radiation Physics and Chemistry, cilt.216, 2024 (SCI-Expanded)
The metal-oxide semiconductor-based structures are among the most prominent optoelectronic devices that can be used in several application fields. The performance of these structures is strongly dependent on the local radiation dose. In this study, we examined the sample structures with and without radiation. The electrical parameters of the studied samples such as ideality factor, series resistance, saturation current, barrier height, and zero-bias barrier height were obtained by performing the forward bias I–V data analyses. The values of n indicate that the irradiation emission mechanism is dominated. Also, this value depends on the evaluation method of the device. According to the Cheung method, while the ideality factor was found to be 5.72 before irradiation, it was found to be 7.04 after irradiation with 30 kGy. According to the TE method, on the other hand, the value of the ideality factor was found to be 6.337 before irradiation while it was found to be 5.016 after irradiation. The high figures of n were considered to be the result of the interface states of the metal/oxide/semiconductor, i.e. the device, and the barrier height's image force lowering. The obtained dielectric parameters do not have to be absolutely correct, especially when there is radiation on the device. It was found that the value of Rs extremely depended on the particular current transport mechanism's contributions to the total current. The non-ideality factor n increases with the 30 kGy irradiation according to the Cheung method while it does not according to the TE theory. At the same time, the forward bias I–V characteristics and their logarithmic plots reveal two distinct linear sections in the entire linearly increasing voltage.