Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures

Dokme İ., ALTINDAL Ş., Gokcen M.

MICROELECTRONIC ENGINEERING, cilt.85, sa.9, ss.1910-1914, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 9
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2008.06.009
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1910-1914
  • Anahtar Kelimeler: MIS structure, dielectric properties, ac conductivity, electric modulus, frequency dependence, INTERFACE STATES, AC CONDUCTIVITY, THIN-FILMS, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, SCHOTTKY DIODES, CAPACITANCE, TEMPERATURE, SILICON, COMPOSITE
  • Gazi Üniversitesi Adresli: Evet

Özet

To determine the dielectric constant dielectric loss (epsilon"), loss tangent (tan delta), the ac electrical conductivity (sigma(ac)) and the electric modulus of Au/SiO(2)/n-Si structure, the measurement admittance technique was used. Experimental results show that the values of epsilon', epsilon", tan delta, sigma(ac) and the electric modulus show fairly large frequency and gate bias dispersion especially at low frequencies due to the interface charges and polarization. An increase in the values of the epsilon' and epsilon" were observed with both a decrease in frequency and an increase in frequency. The a,c is found to increase with both increasing frequency and voltage. In addition, the experimental dielectrical data have been analyzed considering electric modulus formalism. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal-insulator-semi conductor (MIS) structures especially at low frequencies and both in depletion and accumulation regions. (C) 2008 Elsevier B.V. All rights reserved.