Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures


Dokme İ., ALTINDAL Ş., Gokcen M.

MICROELECTRONIC ENGINEERING, vol.85, no.9, pp.1910-1914, 2008 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 85 Issue: 9
  • Publication Date: 2008
  • Doi Number: 10.1016/j.mee.2008.06.009
  • Journal Name: MICROELECTRONIC ENGINEERING
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.1910-1914
  • Keywords: MIS structure, dielectric properties, ac conductivity, electric modulus, frequency dependence, INTERFACE STATES, AC CONDUCTIVITY, THIN-FILMS, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, SCHOTTKY DIODES, CAPACITANCE, TEMPERATURE, SILICON, COMPOSITE

Abstract

To determine the dielectric constant dielectric loss (epsilon"), loss tangent (tan delta), the ac electrical conductivity (sigma(ac)) and the electric modulus of Au/SiO(2)/n-Si structure, the measurement admittance technique was used. Experimental results show that the values of epsilon', epsilon", tan delta, sigma(ac) and the electric modulus show fairly large frequency and gate bias dispersion especially at low frequencies due to the interface charges and polarization. An increase in the values of the epsilon' and epsilon" were observed with both a decrease in frequency and an increase in frequency. The a,c is found to increase with both increasing frequency and voltage. In addition, the experimental dielectrical data have been analyzed considering electric modulus formalism. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal-insulator-semi conductor (MIS) structures especially at low frequencies and both in depletion and accumulation regions. (C) 2008 Elsevier B.V. All rights reserved.