The influence of thickness and ammonia flow rate on the properties of AlN layers

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Corekci S., Ozturk M., Çakmak M., Ozcelik S., Ozbay E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.15, sa.1, ss.32-36, 2012 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 1
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.mssp.2011.06.003
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.32-36
  • Anahtar Kelimeler: AlN thin films, Ammonia flow rate, GROWTH MODE MODIFICATION, X-RAY-DIFFRACTION, ALN/SAPPHIRE TEMPLATES, DISLOCATION DENSITIES, SAPPHIRE SUBSTRATE, OPTICAL-PROPERTIES, EPITAXY, QUALITY, MOVPE, MICROSTRUCTURE
  • Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
  • Gazi Üniversitesi Adresli: Evet

Özet

Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface morphology of AlN layers by high-resolution X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Lower NH3 flow rate improves crystallinity of the symmetric (0 0 0 2) plane in AlN layers. Ammonia flow rate is also correlated with surface quality; pit-free and smooth AlN surfaces have been obtained at a flow rate of 70 standard cm(3) per minute. Thicker AlN films improve the crystallinity of the asymmetric (1 0 1 (1) over bar 2) plane. (c) 2011 Elsevier Ltd. All rights reserved.