The TiO2/SiO2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO2/SiO2/n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The optical properties of the oxide film were analyzed by Fourier transform infrared (FTIR) and Ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the MOS capacitor were investigated using admittance (Y = G + i omega C) measurements performed at various frequencies. The series resistance (R-s) parameter of the capacitor was derived from the conductance method.