Electrical Properties of MOS Capacitor with TiO2/SiO2 Dielectric Layer


Cetin S. Ş. , Efkere H. İ. , Sertel T., Tataroğlu A. , Özçelik S.

SILICON, cilt.12, sa.12, ss.2879-2883, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 12 Konu: 12
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1007/s12633-020-00383-8
  • Dergi Adı: SILICON
  • Sayfa Sayıları: ss.2879-2883

Özet

The TiO2/SiO2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO2/SiO2/n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The optical properties of the oxide film were analyzed by Fourier transform infrared (FTIR) and Ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the MOS capacitor were investigated using admittance (Y = G + i omega C) measurements performed at various frequencies. The series resistance (R-s) parameter of the capacitor was derived from the conductance method.