The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures


Al Abbas J. M. , NARİN P., Atmaca G., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.11, ss.328-331, 2017 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 11
  • Basım Tarihi: 2017
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Sayfa Sayıları: ss.328-331

Özet

In this study, we have numerically investigated the two-dimensional electron gas (2DEG) carrier densities and electron probability densities of pseudomorphically grown ultrathin-barrier A1N/GaN heterostructures using self-consistent solutions of one-dimensional, non-linear Schrodinger-Poisson equations. In these calculations, we have focused on three different A1N/GaN heterostructures included fully undoped, the only Si-doped cap layer and the only Si-doped barrier layer. As a result of the calculations, it was found that doping of A1N barrier layer more effective than other cases on the 2DEG carrier density and the doping of GaN cap layer has not a significant effect on the 2DEG probability densities.