On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods

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Demirezen S., Altindal Ş., Ozcelik S., Ozbay E.

MICROELECTRONICS RELIABILITY, vol.51, no.12, pp.2153-2162, 2011 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 51 Issue: 12
  • Publication Date: 2011
  • Doi Number: 10.1016/j.microrel.2011.05.010
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.2153-2162


In order to explain the experimental effect of interface states (N-ss) and series resistance (R-s) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/omega-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent R-s profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (sigma(ac)) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C-m) and conductance (G(m)/omega) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of N-ss and R-s is confirmed to have significant effect on non-ideal I-V. C-V and G/omega-V characteristics of (Ni/Au)/Al0.22Ga038N/AlN/GaN heterostructures. (C) 2011 Elsevier Ltd. All rights reserved.