Evaluation of dielectric properties of Au/TZO/n-Si structure depending on frequency and voltage

Kınacı B., Bairam C., Yalcin Y., Cokduygulular E., Çetinkaya Ç., Efkere H. İ., ...Daha Fazla

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.33, sa.13, ss.10516-10523, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 13
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10854-022-08038-7
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.10516-10523
  • Gazi Üniversitesi Adresli: Evet

Özet

Y This study examined the dielectric properties of the titanium doped ZnO (TZO) thin film. The TZO thin film was deposited on the n-type Si substrate with the RF sputtering system and the metallization process was completed for electrical characterization. The dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon '') dielectric loss tangent (tan delta), and ac conductivity (sigma(ac)) of the Au/TZO/n-Si structure were determined using capacitance (C) and conductance (G) data, obtained from the admittance measurements for 0.3, 0.5 and 1 MHz frequency values at room temperature. According to the experimental results, epsilon'-V and epsilon ''-V curves were indicated an inductive behavior at 1 MHz. In addition, the variation of these dielectric parameters depending on the frequency in specific negative voltage and positive voltage regions were investigated. Experimental results showed that the dielectric parameters of the Au/TZO/n-Si structure are highly frequency dependent.