The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures

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Atmaca G., Narin P., Kutlu E., LİŞESİVDİN S. B.

IX. Uluslararası Balkan Fizik Birliği Konferansı, 24 - 27 August 2015

• Publication Type: Conference Paper
• Gazi University Affiliated: Yes