The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

Gokcen M., Tunc T., Altindal Ş. , Uslu I.

CURRENT APPLIED PHYSICS, cilt.12, sa.2, ss.525-530, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 12 Konu: 2
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.cap.2011.08.012
  • Sayfa Sayıları: ss.525-530


Two types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi2O3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi2O3-doped) interfacial layer on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (Phi(B0)), series resistance (R-s) and interface-state density (N-ss). Electrical parameters of these two diodes were calculated from the current-voltage (I-V) characteristics and compared with each other. The values of Phi(B0), n and R-s for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Omega, respectively. The values of Phi(B0), n and R-s for SBDs with PVA (Bi2O3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Omega, respectively. For two SBDs, the energy density distribution profiles of interface states (N-ss) were obtained from forward-bias I-V measurements by taking the bias dependence of R-s of these devices into account. The values of N-ss obtained for the SBD with PVA (Bi2O3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer. (C) 2011 Elsevier B.V. All rights reserved.