On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure


Maril E., Kaya A., Cetinkaya H. G., Kocyigit S., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.39, pp.332-338, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 39
  • Publication Date: 2015
  • Doi Number: 10.1016/j.mssp.2015.05.029
  • Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.332-338
  • Keywords: Au/2% graphene-cobalt doped, (Ca3Co4Ga0.001Ox)/n-Si structure, Barrier inhomogeneity, Temperature dependent, Gaussian distribution (GD), GAAS SCHOTTKY DIODES, ELECTRICAL CHARACTERISTICS, CAPACITANCE-VOLTAGE, INTERFACE STATES, BARRIER HEIGHTS, EMISSION, CONTACTS
  • Gazi University Affiliated: Yes

Abstract

In order to good interpret of temperature dependent main electrical parameters in Au/2% graphene-cobalt (GC) doped (Ca3Co4Ga0.001Ox)/n-Si structure, forward bias current-voltage (I-V) characteristics have been investigated in the temperature range of 80340 K. The possible current-conduction mechanisms (CCMs) in this structure was also investigate in detail. The ideality factor (n), reverse saturation current (I-o), and zero-bias barrier height (Phi(Bo)) values were found as 14.5, 7.2 x 10(-6) A, 0.141 eV at 80K and 3.18, 1.7 x 10(-3) A, and 0.526 eV at 340 K, respectively. It is clear that both the value of n and Phi(Bo) are strong function of temperature. While the value of n decreases with increasing temperature, Phi(Bo) increases. In order to explain such behavior of BH the Phi(Bo) and n, Phi(Bo) vs q/2kT, Phi(Bo) vs n, and (n(-1)-1) vs q/2kT plots were drawn to obtain an evidence of a Gaussian distribution (GD) of the BHs and it shows a straight line. The mean value of BH ((Phi) over bar (Bo)) and standard deviation (sigma(s)) were found from the slope and intercept of this plot as 0.614 eV and 0.088 V, respectively. By using the modified Richardson plot, the (Phi) over bar (Bo) and Richardson constant (A*) values were obtained from the slope and intercept of this plot as 0.604 eV and 108.23 A cm(-2) K-2, respectively. It is clear that this value of A* ( = 108.23 A cm(-2) K-2) is very close to the theoretical value 112 A cm(-2) K-2 for n-Si. In conclusion, the temperature dependence of the forward bias I-V characteristics of the structure can be successfully explained on the basis of a thermionic emission (TE) mechanism with GD of the BHs. (C) 2015 Elsevier Ltd. All rights reserved.