Investigation of Electrical and Structural Properties of Ag/TiO<sub>2</sub>/n-InP/Au Schottky Diodes with Different Thickness TiO<sub>2</sub> Interface

Bilgili A. K., Cagatay R., ÖZTÜRK M., ÖZER M.

SILICON, vol.14, no.6, pp.3013-3018, 2022 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 14 Issue: 6
  • Publication Date: 2022
  • Doi Number: 10.1007/s12633-021-01093-5
  • Journal Name: SILICON
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Page Numbers: pp.3013-3018
  • Keywords: Schottky, Structural, Electrical, n-InP, TiO2
  • Gazi University Affiliated: Yes

Abstract

In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes, constructed with sputtering method on n-InP wafer, are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. Thickness of TiO2 interfacial layers are adjusted as 60 angstrom and 120 angstrom. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 angstrom TiO2 interfacial layer is a more ideal diode. It is seen that as thickness of TiO2 interface decrease Ag/TiO2/n-InP Schottky diode becomes more ideal. This result is explained in main text in connection with series resistance, difference between d-spacings of interface and wafer. Comments on relation of lattice mismatch with series resistance are also made.