The aim of this study is to improve the electrical property of Ag/n-Si metal-semiconductor (MS) structure by growing an Ru-doped PVP interlayer between Ag and n-Si using electrospinning technique. To illustrate the utility of the Ru-doped PVP interface layer, current-voltage (I-V) characteristics of Ag/n-Si (MS) and Ag/Ru-doped PVP/n-Si metal-polymer-semiconductor (MPS) structures was carried out. In addition, the main electrical parameters of the fabricated Ag/Ru-doped PVP/n-Si structures were investigated as a function of frequency and electric field using impedance spectroscopy method (ISM). The capacitance-voltage (C-V) plot showed an anomalous peak in the depletion region due to the special density distribution of interface traps/states (D (it) /N (ss)) and interlayer. Both the values of series resistance (R (s)) and N (ss) were drawn as a function of voltage and frequency between 0.5 kHz and 5 MHz at room temperature and they had a peak behavior in the depletion region. Some important parameters of the sample such as the donor concentration atoms (N (D)), Fermi energy (E (F) ), thickness of the depletion region (W (D)), barrier height (I broken vertical bar (B0) ) and R (s) were determined from the C (-2) versus V plot for each frequency. The values of N (D) , W (D) , I broken vertical bar (B0) and R (s) were changed from 1 x 10(15) cm(-3), 9.61 x 10(-5) cm, 0.94 eV and 19,055 Omega (at 0.5 kHz) to 0.13 x 10(15) cm(-3), 27.4 x 10(-4) cm, 1.04 eV and 70 Omega (at 5 MHz), respectively. As a result of the experiments, it is observed that the change in electrical parameters becomes more effective at lower frequencies due to the N (ss) and their relaxation time (tau), dipole and surface polarizations.