Yayınlar & Eserler

Yayın Ağı
Makaleler 33
Tümü (33)
SCI-E, SSCI, AHCI (23)
SCI-E, SSCI, AHCI, ESCI (24)
ESCI (1)
Scopus (24)
TRDizin (1)
Diğer Yayınlar (9)

1. A Computational Study of Structural, Electronic, and Nonlinear Optical Properties of Phenylpyrroles

BAHAT M., ŞAFAK ASAR Y.
Gazi University Journal of Science , cilt.38, sa.2, ss.973-984, 2025 (ESCI) identifier identifier

2. On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique

SEVGİLİ Ö., ŞAFAK ASAR Y., ALTINDAL Ş., ULUSOY M., AZIZIAN-KALANDARAGH Y.
Electrical Engineering , cilt.107, sa.5, ss.6693-6704, 2025 (SCI-Expanded) identifier

3. The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures

Feizollahi Vahid A., Alptekin S., Basman N., ULUSOY M., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.13, 2023 (SCI-Expanded) identifier identifier

4. Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

ŞAFAK ASAR Y., Feizollahi Vahid A., Basman N., ÇETİNKAYA H. G., ALTINDAL Ş.
Applied Physics A: Materials Science and Processing , cilt.129, sa.5, 2023 (SCI-Expanded) identifier identifier

5. Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements

ŞAFAK ASAR Y., SEVGİLİ Ö., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.10, 2023 (SCI-Expanded) identifier identifier

6. On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

ÇETİNKAYA H. G., Feizollahi Vahid A., Basman N., Demirezen S., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.9, 2023 (SCI-Expanded) identifier identifier

7. Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

Yeriskin S., ŞAFAK ASAR Y.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.18, ss.22860-22867, 2021 (SCI-Expanded) identifier identifier

8. Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi

Altındal Yerişkin S., ŞAFAK ASAR Y.
Gazi Üniversitesi Fen Fakültesi Dergisi , 2020 (Hakemli Dergi)

9. On the temperature dependent reverse current conduction mechanisms in (AuZn)/TiO2/p-GaAs MIS structures

ŞAFAK ASAR Y.
Journal of Materials and Electronic Devices4(2020) 14-20 , 2020 (Hakemli Dergi)

10. Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.628, ss.442-449, 2015 (SCI-Expanded) identifier identifier

11. Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.
PHILOSOPHICAL MAGAZINE , cilt.95, sa.26, ss.2885-2898, 2015 (SCI-Expanded) identifier identifier

12. On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors

Kaya A., ALTINDAL Ş., ŞAFAK ASAR Y., Sonmez Z.
CHINESE PHYSICS LETTERS , cilt.30, sa.1, 2013 (SCI-Expanded) identifier identifier

13. Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method

Altindal S., Asar Y., Kaya A., Sonmez Z.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.14, ss.998-1004, 2012 (SCI-Expanded) identifier

14. Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics

VURAL Ö., ŞAFAK ASAR Y., Turut A., ALTINDAL Ş.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.513, ss.107-111, 2012 (SCI-Expanded) identifier identifier

15. On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode

ŞAFAK ASAR Y., SOYLU M., YAKUPHANOĞLU F., ALTINDAL Ş.
JOURNAL OF APPLIED PHYSICS , cilt.111, sa.3, 2012 (SCI-Expanded) identifier identifier

16. Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes

Kanbur H., Altindal Ş., Mammadov T., Safak Y.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.13, ss.713-718, 2011 (SCI-Expanded) identifier identifier

17. Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes

Arslan E., Butun S., ŞAFAK ASAR Y., Cakmak H., Yu H., ÖZBAY E.
MICROELECTRONICS RELIABILITY , cilt.51, sa.3, ss.576-580, 2011 (SCI-Expanded) Creative Commons License identifier identifier

18. Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

Arslan E., Butun S., ŞAFAK ASAR Y., Uslu H., Tascioglu I., ALTINDAL Ş., et al.
MICROELECTRONICS RELIABILITY , cilt.51, sa.2, ss.370-375, 2011 (SCI-Expanded) Creative Commons License identifier identifier

19. Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

Arslan E., Butun S., ŞAFAK ASAR Y., ÖZBAY E.
JOURNAL OF ELECTRONIC MATERIALS , cilt.39, sa.12, ss.2681-2686, 2010 (SCI-Expanded) Creative Commons License identifier identifier

20. Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan E., ŞAFAK ASAR Y., Tascioglu I., Uslu H., ÖZBAY E.
MICROELECTRONIC ENGINEERING , cilt.87, sa.10, ss.1997-2001, 2010 (SCI-Expanded) Creative Commons License identifier identifier

21. Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures

Tascioglu I., Uslu H., Safak Y., Ozbay E.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.6, ss.859-862, 2010 (SCI-Expanded) identifier identifier

22. A comparative of energy density distribution of surface states profiles with 50 and 826 Å insulator layer in Al SiO2 p Si

ALTINDAL Ş., KAYA A., SÖNMEZ Z., ŞAFAK ASAR Y.
Azerbaijan Journal of Physics, Fizika, (ISSN 1028-8546) , cilt.16, sa.2, ss.356-358, 2010 (Hakemli Dergi)

23. Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Tascioglu I., AYDEMİR U., Safak Y., Ozbay E.
SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.812-815, 2010 (SCI-Expanded) Creative Commons License identifier identifier

24. The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AlN/GaN heterostructures

ALTINDAL Ş., ŞAFAK ASAR Y., Tascioglu I., ÖZBAY E.
SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.803-806, 2010 (SCI-Expanded) Creative Commons License identifier identifier

25. Effect of gamma ray 60Co irradiation on the C V and G w caharacteristics of Au n CdTe Schottky barrier sidodes SBDs

ŞAFAK ASAR Y., KANBUR ÇAVUŞ H., USLU H., MAMMADOV T.
Azerbaijan Journal of Physics, Fizika, (ISSN 1028-8546) , cilt.16, sa.2, ss.364-366, 2010 (Hakemli Dergi)

26. Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Vural O., Safak Y., Altindal Ş., Turut A.
CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.761-765, 2010 (SCI-Expanded) identifier identifier

27. Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan E., ŞAFAK ASAR Y., ALTINDAL Ş., Kelekci O., ÖZBAY E.
JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.356, ss.1006-1011, 2010 (SCI-Expanded) Creative Commons License identifier identifier

28. The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Uslu H., Safak Y., Tascioglu I., Altindal Ş.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.12, sa.2, ss.262-266, 2010 (SCI-Expanded) identifier identifier

29. Frequency Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş., AGASİYEV A. A.
Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.258-261, 2009 (Hakemli Dergi)

30. The Barrier Height Distribution in Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T.
Balkan Physics Letters , cilt.15, sa.1, ss.151056, 2009 (Hakemli Dergi)

31. On the Frequency and Voltage Dependent Interface States and Series Resistance in Au SrTiO3 n Si Structures

AYDEMİR U., ŞAFAK ASAR Y., MAMMADOV T. S., ALTINDAL Ş.
Balkan Physics Letters , cilt.15, sa.1, ss.151050, 2009 (Hakemli Dergi)

32. Temperature Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T. S., TATAROĞLU A.
Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.266-269, 2009 (Hakemli Dergi)

33. Frequency and Temperature Dependent Interface States and Series Resistance of Au CdTe Schottky Diodes

MAMMADOV T. S., KANBUR ÇAVUŞ H., ŞAFAK ASAR Y., ALTINDAL Ş., ACAR S., AKHMEDZADE N. D.
Azerbaijan Journal of Physics, Fizika , cilt.13, sa.4, ss.219-223, 2007 (Hakemli Dergi)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 25

1. Polimer ara yüzeyli yapılar ve aygıt özelliklerininbelirlenmesi

ŞAFAK ASAR Y.
25. Yoğun Madde Fiziği ankara Toplantısı YMF25, Türkiye, 20 Aralık 2019, (Tam Metin Bildiri)

2. A compare study on the electrical characteristics of Al/p-Si (MS) and Al/TiO2/p-Si (MIS) structures both in dark and under illumination

Zerdali B., ŞAFAK ASAR Y., ORAK İ.
5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

3. On the anomalous peak in the capacitance-voltage characteristics of Au/TiO2/n-Si (MIS) structures at the depletion and accumulation region

ŞAFAK ASAR Y., Erkul Y. A., Zerdali B., ORAK İ.
5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

4. The Investigation of Photoconducting Properties of Au TiO2 n Si MIS Type Photodiode by Using Current Voltage Characteristics at Room Temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)

5. The Investigation of Photocapacitor Properties of Au TiO2 n Si MIS Type Photodiode by Using Impedance Measurements at Room Temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)

6. The investigation of photocapacitor properties of Au TiO2 n Si MIS type photodiode bu using impedance measurements at room temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)

7. The investigation of photoconducting properties of Au TiO2 n Si MIS type photodiode by using curent voltage characteristics at room temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)

8. ALD Tekniği ile oluşturulan Au/TiO2/n-Si diyotların elektriksel ve foto-iletim özelliklerinin oda sıcaklığında incelenmesi

ŞAFAK ASAR Y., ALTINDAL Ş.
21. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 25 Aralık 2015, (Özet Bildiri)

9. AuZn TiO2 p GaAs 110 Schottky Bariyer Diyotlarda Dielektrik ve Empedans Spektroskopisi

ŞAFAK ASAR Y., ASAR T., ÖZÇELİK S., ALTINDAL Ş.
20. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 26 Aralık 2014, ss.79

10. Au/TiO2/n-Si Diyotlarda aydınlatma şiddetinin doğru ve ters beslem C-V ve G/-V karakteristikler üzerine etkisinin incelenmesi

ALTINDAL Ş., ŞAFAK ASAR Y., ORAK İ.
21. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 25 Aralık 2015, (Özet Bildiri)

11. The energy density distribution of interface states in AuZn TiO2 p GaAs 110 MIS schottky barrier diodes using admittance spectroscopy

ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 31. Uluslararası Fizik Kogresi, 21 - 24 Temmuz 2014, (Özet Bildiri)

12. The frequency dependence properties of tan M and M in the wide frequency range in AuZn TiO2 p GaAs 110 schottky barrier diodes

ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 31. Uluslararası Fizik Kongresi, 21 - 24 Temmuz 2014, (Özet Bildiri)

13. The evaluation of Surface States Barrier Height and Series Resistance in Au CdTe Schottky Barrier Diodes SBDs at Moderate Temperatures

ŞAFAK ASAR Y., ALTINDAL Ş., MEMMEDLİ T., KANBUR ÇAVUŞ H.
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 Eylül 2011, (Özet Bildiri)

14. On the Energy Density Distribution Profile of surface States in Al pentacene p GaSa Heterojuction Diodes

ŞAFAK ASAR Y., YAKUPHANOĞLU F., ALTINDAL Ş.
Mini-Workshop on Surface Science for Inauguration of the Turskish Surface Science Society, Türkiye, 23 Mayıs 2011, (Özet Bildiri)

15. The determination of frequency and applied bias voltage of electrical and dielectric properties of Al SiO2 p Si MOS structures

ALTINDAL Ş., ŞAFAK ASAR Y., SÖNMEZ Z., KAYA A.
Türk Fizik Derneği 27. Uluslararası Fizik Kongresi, 14 - 17 Eylül 2010, (Özet Bildiri)

16. The determination of energy density distribution profile of interface states in Al SiO2 p Si MOS structures

ŞAFAK ASAR Y., ALTINDAL Ş., Sönmez Z., KAYA A.
Türk Fizik Derneği 27. Uluslararası Fizik Kongresi, 14 - 17 Eylül 2010, (Özet Bildiri)

17. Au SrTiO3 n Si Yapısındaki Derin Seviyelerin Tavlamaya Bağlı DLTS Metodu ile Karakterizasyonu

AYDEMİR U., TAŞÇIOĞLU İ., ASAR T., ŞAFAK Y., ALTINDAL Ş., MAMMADOV T. S., et al.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.92

18. Temperature dependent profile of the surface states and series resistance in Ni Au AlGaN AlN GaN heterostructures

TAŞÇIOĞLU İ., Aydemir U., ŞAFAK ASAR Y., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, 18 - 23 Ekim 2009, (Özet Bildiri)

19. The profile of frequency and bias voltage dependent series resistance and the interface states in Ni Au AlGaN AlN GaN heterostructures

ŞAFAK ASAR Y., ÖZÇELİK S., USLU H., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, Türkiye, 18 - 23 Ekim 2009, (Özet Bildiri)

20. The effect of insulator layer thickness on the main electrical parameters in Ni Au AlxGa1 xN AlN GaN heterostructures

ALTINDAL Ş., ŞAFAK ASAR Y., TAŞÇIOĞLU İ., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, 18 - 23 Ekim 2009, (Özet Bildiri)

21. Deep level transient spectroscopy of Au SrTiO3 n Si structures

AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 26. Uluslar arası Fizik Kongresi, 24-27 Eylül 2009, 24 - 27 Eylül 2009, (Özet Bildiri)

22. Frequency Dependent Electrical Characteristics of Ni Au AlGaN AlN GaN Heterostructures

TAŞÇIOĞLU İ., USLU H., ŞAFAK ASAR Y., TATAROĞLU A., ÖZBAY E.
7th BPU General Conference, Alexandroupolis, Greece, 9-13 Sept 2009., Yunanistan, 9 - 13 Eylül 2009, (Özet Bildiri)

23. The effects of frequency and illumination intensity on the main electrical characteristics of Al TiW Pd2Si n Si structures at room temperature

USLU H., ŞAFAK ASAR Y., TAŞÇIOĞLU İ., AFANDİYEVA İ. M.
7th BPU General Conference, Alexandroupolis, Greece, 9-13 Sept 2009., Yunanistan, 9 - 13 Eylül 2009, (Özet Bildiri)

24. Ni Au AlGaN AlN GaN Çoklu Yapıların Ara Yüzey Durum Yoğunluğu Profili

ŞAFAK ASAR Y., USLU H., TAŞÇIOĞLU İ., ÖZBAY E.
Metal, Yarıiletken ve Oksit Materyallerin Üretiminde Kullanılan Sistemler ve Analiz Teknikleri Kongresi, Türkiye, 15 - 16 Haziran 2009, (Tam Metin Bildiri)

25. Püskürtme Metodu ile Hazırlanmış Metal Ferroelektrik Yarıiletken Yapılarda Seri Direnç Etkisinin Sıcaklığa Bağlı İncelenmesi

Aydemir U., USLU H., TAŞÇIOĞLU İ., ŞAFAK ASAR Y.
Metal, Yarıiletken ve Oksit Materyallerin Üretiminde Kullanılan Sistemler ve Analiz Teknikleri Kongresi, Türkiye, 15 - 16 Haziran 2009, (Tam Metin Bildiri)
Metrikler

Yayın

60

Yayın (WoS)

24

Yayın (Scopus)

24

Atıf (WoS)

635

H-İndeks (WoS)

15

Atıf (Scopus)

619

H-İndeks (Scopus)

14

Atıf (Scholar)

728

H-İndeks (Scholar)

16

Toplam Atıf Sayısı

635

Proje

5

Tez Danışmanlığı

3

Açık Erişim

8
BM Sürdürülebilir Kalkınma Amaçları